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| BU806/807 BU806/807 High Voltage & Fast Switching Darlington Transistor * Using In Horizontal Output Stages of 110 Crt Video Displays * BUILT-IN SPEED-UP Diode Between Base and Emitter 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BU806 : BU807 VCEO Collector-Emitter Voltage : BU806 : BU807 VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature 200 150 6 8 15 2 60 150 - 55 ~150 V V V A A A W C C 400 330 V V Value Units Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO (sus) Parameter * Collector-Emitter Sustaining Voltage : BU806 : BU807 Collector Cut-off Current : BU806 : BU807 Collector Cut-off Current : BU806 : BU807 Emitter Cut-off Current * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Damper Diode Forward Voltage Test Condition IC = 100mA, IB = 0 Min. 200 150 100 100 100 100 3 1.5 2.4 2 Max. Units V V A A A A mA V V V ICES VCE = 400V, VBE = 0 VCE = 330V, VBE = 0 VCE = 400V, VBE = -6V VCE = 330V, VBE = -6V VBE = 6V, IC = 0 IC = 5A, IB = 50mA IC = 5A, IB = 50mA IF = 4A ICEV IEBO VCE(sat) VBE(sat) VF * Pulsed: pulsed duration = 300s, duty cycle = 1.5% (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BU806/807 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 Ic = 100 IB hFE, DC CURRENT GAIN VBE(sat) VCE = 5V 100 1 VCE = 1.5V VCE(sat) 10 0.1 1 10 0.1 0.1 1 10 100 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 10 1000 IC[A], COLLECTOR CURRENT 100 Vf[V], FORWARD VOLTAGE IC MAX. (Pulse) 10 1ms 10us 500 m 10 1 IC MAX. (DC) 1 us s DC 100us 0.1 BU806 0.1 0.1 1 10 0.01 0.01 BU807 0.1 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Damper Diode Figure 4. Safe Operating Area 80 70 PC[W], POWER DISSIPATION 60 50 40 30 20 10 0 0 50 o 100 150 200 TC[ C], CASE TEMPERATURE Figure 5. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BU806/807 Package Demensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
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